RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

文件：240.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

文件：240.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

文件：240.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excell

文件：240.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package

The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linea • Excellent thermal stability\n• Common source configuration\n• POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V• Plastic package\n• ESD protection\n• In compliance with the 2002/95/EC European directive;

ST

意法半导体

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF power tran LdmoST N-chann

ST

意法半导体

Package：PowerSO-10RF 裸露底部焊盘（2 条直引线）；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS RF N-CH FET POWERSO-10RF

STMICROELECTRONICS

意法半导体

Package：PowerSO-10RF 裸露底部焊盘（2 条直引线）；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS N-CH 40V POWERSO-10RF STR

STMICROELECTRONICS

意法半导体

Package：PowerSO-10RF 裸露底部焊盘（2 条成形引线）；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：TRANS N-CH 40V POWERSO-10RF FORM

STMICROELECTRONICS

意法半导体