PBSS9110T-Q中文资料安世数据手册PDF规格书

厂商型号	PBSS9110T-Q
功能描述	100 V, 1 A PNP low VCEsat transistor
丝印标识	U7
封装外壳	SOT23
文件大小	243.23 Kbytes
页面数量	12 页
生产厂商	NEXPERIA Nexperia B.V. All rights reserved
中文名称	安世安世半导体(中国)有限公司
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-8 23:00:00
人工找货	PBSS9110T-Q价格和库存，欢迎联系客服免费人工找货

1. General description

PNP low VCEsat transistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

package.

NPN complement: PBSS8110T

2. Features and benefits

• Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat

• High collector current capability

• High collector current gain

• Improved efficiency due to reduced heat generation

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Major application segments

• Automotive 42 V power

• Telecom infrastructure

• Industrial

• DC/DC converters

• Peripheral drivers

• Driver in low supply voltage applications (e.g. lamps and LEDs)

• Inductive load driver (e.g. relays, buzzers and motors)