PBSS9110T-Q中文资料安世数据手册PDF规格书

1. General description

PNP low VCEsat transistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

package.

NPN complement: PBSS8110T

2. Features and benefits

• Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat

• High collector current capability

• High collector current gain

• Improved efficiency due to reduced heat generation

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Major application segments

• Automotive 42 V power

• Telecom infrastructure

• Industrial

• DC/DC converters

• Peripheral drivers

• Driver in low supply voltage applications (e.g. lamps and LEDs)

• Inductive load driver (e.g. relays, buzzers and motors)