丝印：U7；Package：SOT23；100 V, 1 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110T 2. Features and benefits • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High

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Single bipolar transistors

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100 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package. NPN complement: PBSS8110X Features ■ SOT89 package ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficie

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PHI

PHI

100 V, 1 A PNP low VCEsat (BISS) transistor

Features * SOT89 package * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High efficiency leading to less heat generation

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