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PBRN123YT

Marking:7P;Package:SOT23;40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123YT 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRN123YT-Q

Marking:7P;Package:SOT23;40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123YT-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRP113ET

Marking:7K;Package:SOT23;40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN113ET 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRP113ET-Q

Marking:7K;Package:SOT23;40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN113ET-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRP113ZT

Marking:7M;Package:SOT23;40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 10 kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN113ZT 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRP113ZT-Q

Marking:7M;Package:SOT23;40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 10 kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN113ZT-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRP123ET

Marking:7H;Package:SOT23;40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123ET 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRP123ET-Q

Marking:7H;Package:SOT23;40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123ET-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRP123YT

Marking:7Q;Package:SOT23;40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123YT 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PBRP123YT-Q

Marking:7Q;Package:SOT23;40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmall SOT23(TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123YT-Q 2.Featuresandbenefits •600mAoutputcurrentcapability •Lowcollector-emittersaturatio

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

产品属性

  • 产品编号:

    PBR941

  • 制造商:

    NXP Semiconductors

  • 类别:

    分立半导体产品 > 晶体管 - 双极(BJT)- 射频

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 晶体管类型:

    NPN

  • 电压 - 集射极击穿(最大值):

    10V

  • 频率 - 跃迁:

    9GHz

  • 噪声系数(dB,不同 f 时的典型值):

    1.5dB ~ 2.1dB @ 1GHz ~ 2GHz

  • 增益:

    16dB

  • 功率 - 最大值:

    360mW

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    100 @ 5mA,6V

  • 电流 - 集电极 (Ic)(最大值):

    50mA

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    TO-236-3,SC-59,SOT-23-3

  • 供应商器件封装:

    TO-236AB

  • 描述:

    RF SMALL SIGNAL BIPOLAR TRANSIST

供应商型号品牌批号封装库存备注价格
NXP
21+
SOT23
36500
只做原装正品!假一赔十!
询价
NXP(恩智浦)
24+
SOT23
300524
原装正品,现货库存,1小时内发货
询价
23+
SOT23
21000
原装现货特价热销
询价
NXP/恩智浦
2019+
TO-236AB
78550
原厂渠道 可含税出货
询价
NXP(恩智浦)
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NXP/恩智浦
20+
TO-236AB
200000
原装正品 可含税交易
询价
NXP/恩智浦
24+
TO-236AB
504298
免费送样原盒原包现货一手渠道联系
询价
NXP
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
PHI
05+
原厂原装
48051
只做全新原装真实现货供应
询价
NXP恩智浦/PHILIPS飞利浦
24+
SOT-23
7200
新进库存/原装
询价
更多PBR供应商 更新时间2025-5-24 14:04:00