丝印：7P；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP123YT 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturation

文件：271.83 Kbytes 页数：12 Pages

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丝印：7P；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP123YT-Q 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturati

文件：273.29 Kbytes 页数：13 Pages

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安世

丝印：7K；Package：SOT23；40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

1. General description PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ET 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturation

文件：266.62 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：7K；Package：SOT23；40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ

1. General description PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ET-Q 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturati

文件：268.4 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：7M；Package：SOT23；40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 10 kΩ

1. General description PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ZT 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturation

文件：270.46 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：7M；Package：SOT23；40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 10 kΩ

1. General description PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ZT-Q 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturati

文件：272.11 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：7H；Package：SOT23；40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1. General description PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123ET 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturation

文件：267.54 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：7H；Package：SOT23；40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1. General description PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123ET-Q 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturati

文件：269.09 Kbytes 页数：13 Pages

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安世

丝印：7Q；Package：SOT23；40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123YT 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturation

文件：269.66 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：7Q；Package：SOT23；40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123YT-Q 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturatio

文件：271.79 Kbytes 页数：13 Pages

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