MHz Band Ceramic Resonators (SMD) PBRC-G Series

FEATURES • Excellent frequency stability • Low profile • Reflow solderable • Excellent solderability (Nickel barrier + Au flash termination) APPLICATIONS • Car Accessories • Cam-corders • Digital Cameras • PDAs • PC Peripherals

文件：76.26 Kbytes 页数：2 Pages

AVX

MHz Band Ceramic Resonators (SMD) PBRC-G Series

FEATURES • Excellent frequency stability • Low profile • Reflow solderable • Excellent solderability (Nickel barrier + Au flash termination) APPLICATIONS • Car Accessories • Cam-corders • Digital Cameras • PDAs • PC Peripherals

文件：76.26 Kbytes 页数：2 Pages

AVX

MHz Band Ceramic Resonators (SMD) PBRC-G Series

FEATURES • Excellent frequency stability • Low profile • Reflow solderable • Excellent solderability (Nickel barrier + Au flash termination) APPLICATIONS • Car Accessories • Cam-corders • Digital Cameras • PDAs • PC Peripherals

文件：76.26 Kbytes 页数：2 Pages

AVX

MHz Band Ceramic Resonators (SMD) PBRC-G Series

FEATURES • Excellent frequency stability • Low profile • Reflow solderable • Excellent solderability (Nickel barrier + Au flash termination) APPLICATIONS • Car Accessories • Cam-corders • Digital Cameras • PDAs • PC Peripherals

文件：76.26 Kbytes 页数：2 Pages

AVX

NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW

Features * 800 mA output current capability * Low collector-emitter saturation voltage VCEsat * High current gain hFE * Reduces component count * Built-in bias resistors * Reduces pick and place costs * Simplifies circuit design * ±10 resistor ratio tolerance

文件：777.77 Kbytes 页数：17 Pages

NEXPERIA

安世

NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW

Features * 800 mA output current capability * Low collector-emitter saturation voltage VCEsat * High current gain hFE * Reduces component count * Built-in bias resistors * Reduces pick and place costs * Simplifies circuit design * ±10 resistor ratio tolerance

文件：777.77 Kbytes 页数：17 Pages

NEXPERIA

安世

丝印：G1；Package：SC-59A；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW

Features * 800 mA output current capability * Low collector-emitter saturation voltage VCEsat * High current gain hFE * Reduces component count * Built-in bias resistors * Reduces pick and place costs * Simplifies circuit design * ±10 resistor ratio tolerance

文件：777.77 Kbytes 页数：17 Pages

NEXPERIA

安世

丝印：N113ES；Package：SC-43A；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW

Features * 800 mA output current capability * Low collector-emitter saturation voltage VCEsat * High current gain hFE * Reduces component count * Built-in bias resistors * Reduces pick and place costs * Simplifies circuit design * ±10 resistor ratio tolerance

文件：777.77 Kbytes 页数：17 Pages

NEXPERIA

安世

丝印：7G；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 1 kΩ

1. General description NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP113ET 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturation

文件：268.4 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：7G；Package：SOT23；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW

Features * 800 mA output current capability * Low collector-emitter saturation voltage VCEsat * High current gain hFE * Reduces component count * Built-in bias resistors * Reduces pick and place costs * Simplifies circuit design * ±10 resistor ratio tolerance

文件：777.77 Kbytes 页数：17 Pages

NEXPERIA

安世