丝印：7G；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 1 kΩ

1. General description NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP113ET 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturation

文件：268.4 Kbytes 页数：12 Pages

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丝印：7G；Package：SOT23；NPN 800 mA, 40 V BISS RETs; R1 = 1 kW, R2 = 1 kW

Features * 800 mA output current capability * Low collector-emitter saturation voltage VCEsat * High current gain hFE * Reduces component count * Built-in bias resistors * Reduces pick and place costs * Simplifies circuit design * ±10 resistor ratio tolerance

文件：777.77 Kbytes 页数：17 Pages

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NPN 800 mA, 40 V BISS RETs; R1 = 1 k?? R2 = 1 k?

文件：159.45 Kbytes 页数：17 Pages

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丝印：7G；Package：SOT23；40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 1 kΩ

1. General description NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBRP113ET-Q 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturati

文件：270.15 Kbytes 页数：13 Pages

NEXPERIA

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40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 1 kΩ

NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBRP113ET-Q • 600 mA output current capability\n• Low collector-emitter saturation voltage VCEsat\n• High current gain hFE\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• ± 10 % resistor ratio tolerance\n• Qualified according to AEC-Q101 ;

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Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 250MW TO236AB

Nexperia USA Inc.