丝印：7H；Package：SOT23；40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1. General description PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123ET 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturation

文件：267.54 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 2.2 kW

文件：112.65 Kbytes 页数：12 Pages

恩XP

丝印：7H；Package：SOT23；40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1. General description PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123ET-Q 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturati

文件：269.09 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 2.2 kOhm

800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBRN123ET. • 800 mA repetitive peak output current\n• Low collector-emitter saturation voltage VCEsat\n• High current gain hFE\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• +-10 pct resistor ratio tolerance\n• AEC-Q101 qualified;

Nexperia

安世

40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBRN123ET-Q • 600 mA output current capability\n• Low collector-emitter saturation voltage VCEsat\n• High current gain hFE\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• ± 10 % resistor ratio tolerance\n• Qualified according to AEC-Q101 ;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 40V TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司