丝印：7H；Package：SOT23；40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

1. General description PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123ET-Q 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturati

文件：269.09 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBRN123ET-Q • 600 mA output current capability\n• Low collector-emitter saturation voltage VCEsat\n• High current gain hFE\n• Reduces component count\n• Built-in bias resistors\n• Reduces pick and place costs\n• Simplifies circuit design\n• ± 10 % resistor ratio tolerance\n• Qualified according to AEC-Q101 ;

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40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123YT 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturation

文件：269.66 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123YT-Q 2. Features and benefits • 600 mA output current capability • Low collector-emitter saturatio

文件：271.79 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司