ABC847PN-HF

Marking：7P；Package：SOT-363；Small Signal Transistor

Features -Epitaxialdieconstruction. -TwoisolatedNPNandPNPtransistorsinone Package. -Ultra-smallsurfacemountpackage. -AEC-Q101Qualified.

AD5112BCPZ5-500R7

Marking：7P；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ►Nominalresistortoleranceerror:±8%maximum ►Wipercurrent:±6mA ►Rheostatmodetemperaturecoefficient:35ppm/°C ►Lowpowerconsumption:2.5μAmax@2.7Vand125°C ►Widebandwidth:4MHz(5kΩoption) ►Power-onEEPROMrefreshtime

AD5112BCPZ5-RL7

Marking：7P；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ►Nominalresistortoleranceerror:±8%maximum ►Wipercurrent:±6mA ►Rheostatmodetemperaturecoefficient:35ppm/°C ►Lowpowerconsumption:2.5μAmax@2.7Vand125°C ►Widebandwidth:4MHz(5kΩoption) ►Power-onEEPROMrefreshtime

BC847PN

Marking：7P；Package：SOT-363；SOT-363 Plastic-Encapsulate Transistors

FEATURES eEpitaxialDieConstruction eTwoisolatedNPN/PNP(BC847W+BC857W)Transistorsinonepackage

BC847PN

Marking：7P；Package：SOT-363；Plastic-Encapsulate Transistors

FEATURES EpitaxialDieConstruction TwoisolatedNPN/PNPTransistorsinonepackage(BC847W+BC857W)

BC847PN

Marking：7P；Package：SOT-363；NPN/PNP Complementary Silicon Transistor Array

■Features ●TwointernalisolatedNPN/PNPTransistorsinonepackage ●ForSwitchingandAFAmplifierApplications ●Ultra-SmallSurfaceMountPackage

BCM856BSH

Marking：7P；Package：TSSOP6；65 V, 100 mA PNP/PNP matched double transistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Currentgainmatching •Base-emittervoltagematching •Drop-inreplacementforstandarddoubletransistors •Nomutualinterferencebetweenthetransistors •High-temperatureapplicationsupto1

BCM856BSH-Q

Marking：7P；Package：TSSOP6；65 V, 100 mA PNP/PNP matched double transistor

Featuresandbenefits •Lowcollectorcapacitance •Lowcollector-emittersaturationvoltage •Currentgainmatching •Base-emittervoltagematching •Drop-inreplacementforstandarddoubletransistors •Nomutualinterferencebetweenthetransistors •High-temperatureapplicationsupto1

BCW66FR

Marking：7P；Package：SOT-23；NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

SOT23NPNSILICONPLANARMEDIUMPOWERTRANSISTORS

BZX8850S-C18

Marking：7P；Package：SOD882BD；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinanultrasmallSOD882BD(DFN1006BD-2)leadless Surface-MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Totalpowerdissipation:≤365mW •Toleranceseries:approximately±5 •Workin