型号：AD5111BCPZ10-500R7；Package：LFCSP_UD；Single-Channel, 128-/64-/32-Position, Up/Down, ±8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES Nominal resistor tolerance error: ±8% maximum Wiper current: ±6 mA Rheostat mode temperature coefficient: 35 ppm/°C Low power consumption: 2.5 μA max @ 2.7 V and 125°C Wide bandwidth: 4 MHz (5 kΩ option) Power-on EEPROM refresh time

文件：448.89 Kbytes 页数：24 Pages

亚德诺

型号：AD5111BCPZ10-RL7；Package：LFCSP_UD；Single-Channel, 128-/64-/32-Position, Up/Down, ±8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES Nominal resistor tolerance error: ±8% maximum Wiper current: ±6 mA Rheostat mode temperature coefficient: 35 ppm/°C Low power consumption: 2.5 μA max @ 2.7 V and 125°C Wide bandwidth: 4 MHz (5 kΩ option) Power-on EEPROM refresh time

文件：448.89 Kbytes 页数：24 Pages

亚德诺

型号：BC807-16W-AU_R1_000A1；Package：SOT-323；Silicon PNP General Purpose Transistors

Features  Silicon PNP Epitaxial type  Excellent DC current gain characteristics  General purpose amplifier application  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN complement: BC817W-AU series

文件：517.919 Kbytes 页数：6 Pages

強茂

型号：BZX8850S-C24；Package：SOD882BD；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：257.07 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BZX8850S-C24-Q；Package：DFN1006BD-2；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：258.089 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：PDTB123ET；Package：SOT23；PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Features and benefits * 500 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance * AEC-Q101 qualified

文件：374.3 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：MMBD5817S；Package：SOT-23；SCHOTTKY BARRIER RECTIFIER

文件：225.12 Kbytes 页数：5 Pages

型号：TPS389050QDSERQ1；Package：WSON；Low Quiescent Current, 1 Accurate Supervisor with Programmable Delay

文件：1.04838 Mbytes 页数：26 Pages

德州仪器

型号：BUK7S0R5-40H；Package：LFPAK88；N-channel 40 V, 0.5 mOhm standard level MOSFET in LFPAK88

1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability

文件：323.54 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

型号：BUK7S0R7-40H；Package：LFPAK88；N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88

1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability

文件：317.19 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司