丝印：7S；Package：SOT23；PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Features and benefits * 500 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance * AEC-Q101 qualified

文件：374.3 Kbytes 页数：11 Pages

NEXPERIA

安世

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Features * Built-in bias resistors * Simplifies circuit design * 500 mA output current capability * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance

文件：245.81 Kbytes 页数：11 Pages

NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

文件：138.17 Kbytes 页数：10 Pages

恩XP

PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PDTD123ET. • 500 mA output current capability\n• Reduces pick and place costs\n• Built-in bias resistors\n• ±10 % resistor ratio tolerance\n• Simplifies circuit design\n• AEC-Q101 qualified\n• Reduces component count;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS PNP 50V TO236AB

Nexperia USA Inc.