-7T

型号：PDTD123ET；Package：SOT-23；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

Generaldescription 500mANPNResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

-7T

型号：PDTD123ET；Package：SOT-23；NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

Generaldescription 500mANPNResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

PHI

-7T

型号：PDTD123ET；Package：SOT-23；Low VCEsat (BISS) transistors

PHI