丝印：7V；Package：SOT-323；Silicon PNP General Purpose Transistors

Features  Silicon PNP Epitaxial type  Excellent DC current gain characteristics  General purpose amplifier application  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN complement: BC817W-AU series

文件：517.919 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：7V；Package：SOD882BD；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：257.07 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7V；Package：DFN1006BD-2；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：258.089 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7V；Package：SOT23；50 V, 500 mA NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ

1. General description NPN 500 mA Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB113ZT 2. Features and benefits • Built-in bias resistors • Reduces component count • Simplifies circuit design • Reduces pick and place

文件：897.26 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7V；Package：SOT23；NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ

1. General description NPN 500 mA Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB113ZT 2. Features and benefits • Built-in bias resistors • Reduces component count • Simplifies circuit design • Reduces pick and place

文件：201.28 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7V；Package：WSON；Low Quiescent Current, 1 Accurate Supervisor with Programmable Delay

文件：1.04838 Mbytes 页数：26 Pages

TI

德州仪器

丝印：7V5A；Package：SMC；Transient Voltage Suppressors

Breakdown Voltage: 6.8 to 600 V Peak Pulse Power: 1500 W Features ● Glass passivated chip ● 1500 W peak pulse power capability with a 10/1000 ȝs waveform, repetitive rate (duty cycle):0.01 ● Low leakage ● Uni and Bidirectional unit ● Excellent clamping capability ● Very fast respo

文件：2.20141 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：7V5A；Package：DO-214AB；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

FEATURES  For surface mounted applications in order to optimize board space  Typical maximum temperature coefficient △VBR=0.1%xVBR@25°C x△T  Low profile package  Built-in strain relief  Glass passivated junction  Excellent clamping capability  Repetition Rate (duty cycle):0.01

文件：707.52 Kbytes 页数：4 Pages

AOSMD

万国半导体

丝印：7V5A；Package：DO-214AB；Transient Voltage Suppressors (TVS) Data Sheet

Features ■For surface mounted applications in order to optimize board space ■Low profile package ■Built in strain relief ■Glass p assivated j unction ■Low inductance ■Excellent clamping capability ■150 0W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0

文件：1.4662 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：7V5A；Package：DO-214AB；6.8 To 600V 1500W Surface Mount Transient Voltage Suppressors (TVS)

Features A For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability 1500W Peak power capability at 10 × 1000μs waveform Repetition rate (duty cycle):0.01% Fast respo

文件：3.69055 Mbytes 页数：7 Pages

UNSEMI

优恩半导体