PDTD113ZT

Marking：7V；Package：SOT23；50 V, 500 mA NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ

1.Generaldescription NPN500mAResistor-EquippedTransistor(RET)inasmallSOT23Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTB113ZT 2.Featuresandbenefits •Built-inbiasresistors •Reducescomponentcount •Simplifiescircuitdesign •Reducespickandplace

PDTD113ZT

Marking：-7V；Package：SOT-23；Low VCEsat (BISS) transistors

PDTD113ZT-Q

Marking：7V；Package：SOT23；NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ

1.Generaldescription NPN500mAResistor-EquippedTransistor(RET)inasmallSOT23Surface-MountedDevice (SMD)plasticpackage. PNPcomplement:PDTB113ZT 2.Featuresandbenefits •Built-inbiasresistors •Reducescomponentcount •Simplifiescircuitdesign •Reducespickandplace

PDTD113ZT_15

NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW

PDTD113ZT,215

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 50V TO236AB

Nexperia USA Inc.

PDTD113ZTVL

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：PDTD113ZT/SOT23/TO-236AB

Nexperia USA Inc.