丝印：7R0；WE-EHPI Energy Harvesting Coupled Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：661.24 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：7R0；SMD POWER INDUCTOR-RoHS

文件：154.35 Kbytes 页数：3 Pages

FENGJUI

峰瑞科技

丝印：7R0ELBE；Package：SOT8073-1；150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package

1. General description The GAN7R0-150LBE is a general purpose 150 V, 7 mΩ Gallium Nitride (GaN) FET in a Land Grid Array (LGA) package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits • Enhancement mode - normally-off power switch • Ultra high freque

文件：275.11 Kbytes 页数：13 Pages

NEXPERIA

安世

WIRE WOUND SMD INDUCTOR

●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer

文件：718.61 Kbytes 页数：4 Pages

AITSEMI

创瑞科技

85째C Temperature Stable Ceramic Disc Capacitors

文件：28.02 Kbytes 页数：2 Pages

ILLINOISCAPACITOR