丝印：7P；Package：TSSOP6；65 V, 100 mA PNP/PNP matched double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Current gain matching • Base-emitter voltage matching • Drop-in replacement for standard double transistors • No mutual interference between the transistors • High-temperature applications up to 1

文件：237.75 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

65 V, 100 mA PNP/PNP matched double transistor

PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: BCM846BSH-Q • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Current gain matching\n• Base-emitter voltage matching\n• Drop-in replacement for standard double transistors\n• No mutual interference between the transistors\n• High-temperature applications up to 175 °C\n• Qualified accord;

Nexperia

安世

65 V, 100 mA PNP/PNP matched double transistors

1. General description PNP/PNP matched double transistors in SOT363 (SC-88) small Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. 2. Features and benefits • Current gain matching • Base-emitter voltage matching • Drop-in replacement for standard

文件：236.58 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP/PNP matched double transistors

文件：123.22 Kbytes 页数：14 Pages

PHI

飞利浦