丝印：7P；Package：TSSOP6；65 V, 100 mA PNP/PNP matched double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Current gain matching • Base-emitter voltage matching • Drop-in replacement for standard double transistors • No mutual interference between the transistors • High-temperature applications up to 1

文件：236.63 Kbytes 页数：10 Pages

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丝印：7P；Package：TSSOP6；65 V, 100 mA PNP/PNP matched double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Current gain matching • Base-emitter voltage matching • Drop-in replacement for standard double transistors • No mutual interference between the transistors • High-temperature applications up to 1

文件：237.75 Kbytes 页数：10 Pages

NEXPERIA

安世

65 V, 100 mA PNP/PNP matched double transistor

PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: BCM846BSH • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Current gain matching\n• Base-emitter voltage matching\n• Drop-in replacement for standard double transistors\n• No mutual interference between the transistors\n• High-temperature applications up to 175 °C;

Nexperia

安世

65 V, 100 mA PNP/PNP matched double transistor

PNP/PNP matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n NPN/NPN complement: BCM846BSH-Q • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Current gain matching\n• Base-emitter voltage matching\n• Drop-in replacement for standard double transistors\n• No mutual interference between the transistors\n• High-temperature applications up to 175 °C\n• Qualified accord;

Nexperia

安世