PBSS4032PZ-Q

Marking：PB4032PZ；Package：SOT223；30 V, 4.4 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD) plasticpackage. NPNcomplement:PBSS4032NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Optimizedswitchingtime •Highcollectorcurrentcapab

PBSS4041NZ

Marking：PB4041NZ；Package：SC-73；60 V, 7 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS4041PZ. Featuresandbenefits ■Verylowcollector-emittersaturation voltageVCEsat ■Highcollectorcurren

PBSS4041NZ-Q

Marking：PB4041NZ；Package：SC-73；60 V, 7 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD) plasticpackage. PNPcomplement:PBSS4041PZ-Q 2.Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Hig

PBSS4041NZ-Q

Marking：PB4041NZ；Package：SC-73；60 V, 7 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD) plasticpackage. PNPcomplement:PBSS4041PZ-Q 2.Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Hig

PBSS4041PZ

Marking：PB4041PZ；Package：SC-73；60 V, 5.7 A PNP low VCEsat (BISS) transistor

Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *SmallerrequiredPrinted-CircuitBoard(PCB)

PBSS4041PZ-Q

Marking：PB4041PZ；Package：SC-73；60 V, 5.7 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD) plasticpackage. NPNcomplement:PBSS4041NZ-Q 2.Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Hig

PBSS4041PZ-Q

Marking：PB4041PZ；Package：SOT223；60 V, 5.7 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD) plasticpackage. NPNcomplement:PBSS4041NZ-Q 2.Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Hig

PBSS4350Z

Marking：PB4350；Package：SC-73；50 V low VCEsat NPN transistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223plasticpackage.PNPcomplement:PBSS5350Z. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athighIC •Higherefficiencyl

PBSS4540Z

Marking：PB4540；Package：SOT223；40 V low VCEsat NPN transistor

FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapabilities •Improveddevicereliabilityduetoreducedheatgeneration. APPLICATIONS •Supplylineswitchingcircuits •Batterymanagementapplications •DC/DCconverterapplications •Strobeflashunits •Heavydutybattery

PBSS5350Z

Marking：PB5350；Package：SC-73；50 V, 3 A PNP low VCEsat (BISS) transistor

1.Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSOT223 (SC-73)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4350Z 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrent