丝印：P6N；PLEDxN Series

Description The open LED protector provides a switching electronic shunt path when a single LED in an LED string fails as an open circuit. This ensures the entire LED string will continue to function even if a single LED in the string does not. This provides higher reliable lighting functions

文件：761.28 Kbytes 页数：5 Pages

Littelfuse

力特

丝印：P6NK50Z；Package：TO-220；N-CHANNEL 500V - 0.93 ohm - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET

■ TYPICAL RDS(on) = 0.93 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALANCHE TESTED ■ GATE CHARGE MINIMIZED ■ VERY LOW INTRINSIC CAPACITANCES ■ VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established st

文件：408.02 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：P6NK60Z；Package：TO-220；N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：578.48 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：P6NK60ZFP；Package：TO-220FP；N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：578.48 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：P6NK90Z；Package：TO-220；N-channel 900V - 1.56 - 5.8A Zener-protected SuperMESH Power MOSFET

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a h

文件：483.55 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：P6NK90ZFP；Package：TO-220FP；N-channel 900V - 1.56 - 5.8A Zener-protected SuperMESH Power MOSFET

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a h

文件：483.55 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

丝印：P6NK60Z；Package：TO-220；N-channel 600 V - 1 廓 - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH??Power MOSFET

文件：444.64 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：P6NK60ZFP；Package：TO-220FP；N-channel 600 V - 1 廓 - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH??Power MOSFET

文件：444.64 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：P6NM60N；Package：TO-220；N-channel 600 V, 0.85 ?? 4.6 A MDmesh??II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK

文件：698.48 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ

文件：536.76 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司