BZX84C5V6

Marking：P8；Package：SOT-23；Silicon Planar Zener Diodes

■SiliconPlanarZenerDiodes ThisseriesofZenerdiodesisofferedintheconvenient,surfacemountplasticSOT-23package.Thesedevicesaredesignedtoprovidevoltageregulationwithminimumspacerequirement.Theyarewellsuitedforapplicationssuchascellularphones,handheldportables

BZX84W-C7V5

Marking：P8；Package：SOT323；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 3.Applications •Gene

BZX84W-C7V5-Q

Marking：P8；Package：SC-70；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 •Qualifiedaccordingto

ESD601DPYR

Marking：P8；Package：X1SON；ESD601 Low Capacitance ESD Diode for RF and ADAS Signal Protection

1Features •IEC61000-4-2ESDProtection: –±15kVcontactdischarge –±15kVairgapdischarge •ISO10605(330pF,330Ω)ESDProtection: –±12kVcontactdischarge –±12kVair-gapdischarge •IEC61000-4-5surgeprotection: –2.7A(8/20μs) •I/Ocapacitance:0.3pF(typical) •Ultralowle

ISL9016IRUMCZ-T

Marking：P8；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mADualLDOwithLowNoise,HighPSRR,andLowIQ ISL9016isahighperformancedualLDOcapableofprovidingupto150mAcurrentoneachchannel.ItfeaturesalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto4.7µFwithanESRofupto200mΩ. Features •

MM5Z11

Marking：P8；Package：SOD-541；Zener Diode

Features ●Highreliability ●ZenerVoltage2.0V~75V

MT4S102T

Marking：P8；Package：TESQ；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

MT4S102U

Marking：P8；Package：USQ；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

PMEG2005CT

Marking：P8；Package：SOT23；500 mA low VF dual MEGA Schottky barrier rectifier

Featuresandbenefits *Averageforwardcurrent:IF(AV)≤0.5A *Reversevoltage:VR≤20V *Lowforwardvoltage *AEC-Q101qualified *SmallSMDplasticpackage

RTQ2521GQW

Marking：P8；Package：WDFN-8EL；1.2A, 6.5V, Ultra Low Noise, Ultra Low Dropout Linear Regulator

GeneralDescription TheRTQ2521isahigh-current(1.2A),low-noise(6μVrms), highaccuracy(1overline,load,andtemperature),lowdropout linearregulator(LDO)capableofsourcing1.2A withextremelylowdropout(max.75mV).Thedevice supportssingleinputsupplyvoltageaslowto1.1Vt