丝印：P8；Package：SOT-23；Silicon Planar Zener Diodes

■ Silicon Planar Zener Diodes This series of Zener diodes is offered in the convenient, surface mount plastic SOT-23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables

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YFWDIODE

佑风微

丝印：P8；Package：SOT323；Voltage regulator diodes

1. General description General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Wide working voltage range: nominal 2.4 V to 75 V (E24 range) • Two tolerance series: ± 2 and ± 5 3. Applications • Gene

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NEXPERIA

安世

丝印：P8；Package：SC-70；Voltage regulator diodes

1. General description General-purpose Zener diodes in a SOT323 (SC-70) leadless very small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Wide working voltage range: nominal 2.4 V to 75 V (E24 range) • Two tolerance series: ± 2 and ± 5 • Qualified according to

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丝印：P8；Package：X1SON；ESD601 Low Capacitance ESD Diode for RF and ADAS Signal Protection

1 Features • IEC 61000-4-2 ESD Protection: – ±15kV contact discharge – ±15kV air gap discharge • ISO 10605 (330pF, 330Ω) ESD Protection: – ±12kV contact discharge – ±12kV air-gap discharge • IEC 61000-4-5 surge protection: – 2.7A (8/20μs) • I/O capacitance: 0.3pF (typical) • Ultra low le

文件：1.87709 Mbytes 页数：15 Pages

TI

德州仪器

丝印：P8；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mA Dual LDO with Low Noise, High PSRR, and Low IQ ISL9016 is a high performance dual LDO capable of providing up to 150mA current on each channel. It features a low standby current and very high PSRR and is stable with output capacitance of 1µF to 4.7µF with an ESR of up to 200mΩ. Features •

文件：558.84 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：P8；Package：SOD-541；Zener Diode

Features ● High reliability ● Zener Voltage 2.0V~75V

文件：213.4 Kbytes 页数：3 Pages

FS

丝印：P8；Package：TESQ；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：P8；Package：USQ；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：P8；Zener Protection Diode

Features • Full Range of Working Voltage Options • High ESD Ratings • Wettable Flank Package for Optimal Automated Optical Inspection (AOI) • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These D

文件：121.91 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

丝印：P8；Package：SOT23；500 mA low VF dual MEGA Schottky barrier rectifier

Features and benefits * Average forward current: IF(AV) ≤ 0.5 A * Reverse voltage: VR ≤ 20 V * Low forward voltage * AEC-Q101 qualified * Small SMD plastic package

文件：452.57 Kbytes 页数：15 Pages

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