丝印：p86；Package：SOT765-1；Low-power dual 2-input EXCLUSIVE-OR gate

1. General description The 74AUP2G86 provides the dual 2-input EXCLUSIVE-OR function. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power con

文件：257.17 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：p86；Package：SOT833-1；Low-power dual 2-input EXCLUSIVE-OR gate

1. General description The 74AUP2G86 provides the dual 2-input EXCLUSIVE-OR function. Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low static and dynamic power con

文件：257.17 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：P86；Package：SC-88A；TinyLogic ULP-A Exclusive-OR Gate

The NC7SP86 is a single 2−input exclusive−OR gate in tiny footprint packages. The device is designed to operate for VCC = 0.9 V to 3.6 V. Features • Designed for 0.9 V to 3.6 V VCC Operation • 2.2 ns tPD at 3.3 V (Typ) • Inputs/Outputs Over−Voltage Tolerant up to 3.6 V • IOFF Supports Part

文件：161.29 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：P864；Package：11-13K1；TOSHIBA PHOTO-INTERRUPTERS INFRARED LED PHOTODARLINGTON TRANSISTOR

VCRS, COMPACT DISC PLAYERS COPIERS, FAX MACHINES, PRINTERS VENDING MACHINES, TICKET MACHINES VARIOUS POSITION DETECTION SENSORS The TLP864 and TLP865 photo-interrupters combines GaAs infrared LED with a high-sensitivity Si photodarlington transistor. They exhibit a hgih current transfer ratio,

文件：414.29 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：P865；Package：11-13M1；TOSHIBA PHOTO-INTERRUPTERS INFRARED LED PHOTODARLINGTON TRANSISTOR

VCRS, COMPACT DISC PLAYERS COPIERS, FAX MACHINES, PRINTERS VENDING MACHINES, TICKET MACHINES VARIOUS POSITION DETECTION SENSORS The TLP864 and TLP865 photo-interrupters combines GaAs infrared LED with a high-sensitivity Si photodarlington transistor. They exhibit a hgih current transfer ratio,

文件：414.29 Kbytes 页数：10 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=86A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：313.4 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：843.41 Kbytes 页数：4 Pages

SHINDENGEN