isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=86A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.0mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

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ISC

无锡固电

Power MOSFET

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SHINDENGEN

Power MOSFETs　THD

•Isolated Package\n•Low Ron\n•10V Gate Drive\n•Low Capacitance;

Shindengen

新电元

PHILIPS
PLCC

PHI

飞利浦

上传：深圳市柯尔基电子有限公司

PHILIPS/飞利浦
PLCC44

PHI

上传：深圳庞田科技有限公司