PJP7NA60_T0_00001芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
PJP7NA60_T0_00001	文件：487.93 Kbytes Page：8 Pages	丝印：P7NA60；Package：TO-220AB；600V N-Channel MOSFET Features  RDS(ON), VGS@10V,ID@3.5A 文件：487.93 Kbytes 页数：8 Pages	PANJIT 強茂	PANJIT
P7NA60	文件：206.8 Kbytes Page：10 Pages	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( 文件：206.8 Kbytes 页数：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
P7NA60FI	文件：206.8 Kbytes Page：10 Pages	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS( 文件：206.8 Kbytes 页数：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多P7NA60供应商更新时间2025-9-14 11:06:00