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型号	下载订购	功能描述	制造商上传企业	LOGO
SVSP7N60DD2TR	文件：352.36 Kbytes Page：9 Pages	丝印：P7N60DD2；Package：TO-252-2L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens 文件：352.36 Kbytes 页数：9 Pages	SILAN 士兰微	SILAN
SVSP7N60DD2TR	文件：352.34 Kbytes Page：9 Pages	丝印：P7N60DD2；Package：TO-252-2L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens 文件：352.34 Kbytes 页数：9 Pages	SILAN 士兰微	SILAN
SVSP7N60DD2TR	文件：352.34 Kbytes Page：9 Pages	丝印：P7N60DD2；Package：TO-252-2L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens 文件：352.34 Kbytes 页数：9 Pages	SILAN 士兰微	SILAN
SVSP7N60DD2TR	文件：344.56 Kbytes Page：9 Pages	丝印：P7N60DD2；Package：TO-252-2L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens 文件：344.56 Kbytes 页数：9 Pages	SILAN 士兰微	SILAN
SVSP7N60DD2TR	文件：344.54 Kbytes Page：9 Pages	丝印：P7N60DD2；Package：TO-252-2L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens 文件：344.54 Kbytes 页数：9 Pages	SILAN 士兰微	SILAN
SVSP7N60DD2TR	文件：344.54 Kbytes Page：9 Pages	丝印：P7N60DD2；Package：TO-252-2L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens 文件：344.54 Kbytes 页数：9 Pages	SILAN 士兰微	SILAN
P7N60DD2	文件：344.54 Kbytes Page：9 Pages	7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power dens 文件：344.54 Kbytes 页数：9 Pages	SILAN 士兰微	SILAN

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳诚思涵科技有限公司	SVSP-D1	SAMSUNG	16+	QFP	1052	进口原装现货/价格优势!	询价
深圳市一线半导体有限公司	SVSP-D1	SAMSUNG	24+	QFP	71		询价
深圳市澳亿芯电子科技有限公司	SVSP-D1	SAMSUNG/三星	24+	QFP48	12000	原装正品有挂就有货	询价
深圳市华康联电子科技有限公司	SVSP-D1	SAMSUNG/三星	23+	QFP48	98900	原厂原装正品现货!!	询价
深圳市芯亿发电子科技有限公司	SVSP-D1	SAMSUNG/三星	26+	QFP48	20000	公司只有正品,实单来谈	询价
深圳市达豪电子有限公司	SVSP-D1	SAMSUNG/三星	25+	QFP48	18000	原装正品,全新来谈	询价
上海市鑫鸿达电子	SV-SPF1	3M	2022+		13	全新原装货期两周	询价
北京京北通宇电子元件有限公司	SV-SPF1	SCS	24+	con	10000	查现货到京北通宇商城	询价
深圳市瑞新盛科技有限公司	SVSQ65R041P7HD4	SILAN/士兰微	25+	TO-247-3L	10000	原装正品优势供应	询价
深圳市力拓辉电子有限公司	SVT025M471GCBPB12V00A	冠坤电子	21+	10mm*12.5mm	13	只做原装鄙视假货15118075546	询价

更多P7N60DD2供应商更新时间2026-3-28 8:30:00

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