首页>SVSP7N60DD2TR>规格书详情
SVSP7N60DD2TR中文资料士兰微数据手册PDF规格书
SVSP7N60DD2TR规格书详情
DESCRIPTION
SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high
voltage power MOSFETs produced using Silan’s super junction MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, for example, it is suitable for
hard and soft switching topologies.
FEATURES
7A,600V, RDS(on)(typ.)=0.48@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Enhanced avalanche capability
Extreme dv/dt rated
High peak current capability
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILAN |
37 |
询价 | |||||
SAMSUNG/三星 |
24+ |
QFP48 |
12000 |
原装正品 有挂就有货 |
询价 | ||
SILAN(士兰微电子) |
2511 |
5904 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | |||
SAMSUNG/三星 |
23+ |
QFP48 |
98900 |
原厂原装正品现货!! |
询价 | ||
SILAN/士兰微 |
25+ |
TO-247-3L |
10000 |
原装正品优势供应 |
询价 | ||
SILAN/士兰微 |
25+ |
TO-252-2L |
188600 |
全新原厂原装正品现货 欢迎咨询 |
询价 | ||
SILAN/士兰微 |
21+ |
TO220 |
38000 |
询价 | |||
冠坤电子 |
21+ |
10mm*12.5mm |
13 |
全新原装鄙视假货 |
询价 | ||
SILAN(士兰微) |
2025+ |
PDFN-8(3x3) |
10560 |
询价 | |||
SCS |
24+ |
con |
10000 |
查现货到京北通宇商城 |
询价 |
