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SVSP14N65FJDD2中文资料士兰微数据手册PDF规格书
SVSP14N65FJDD2规格书详情
DESCRIPTION
SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high
voltage power MOSFETs produced using Silan’s DPMOS technology.
It achieves low conduction loss and switching losses. It leads the
design engineers to their power converters with high efficiency, high
power density, and superior thermal behavior. Furthermore, it’s
universal applicable, i.e., suitable for hard and soft switching
topologies.
FEATURES
14A,650V, RDS(on)(typ.)=0.26@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
25+ |
QFP48 |
996880 |
只做原装,欢迎来电资询 |
询价 | ||
SILAN/士兰微 |
21+ |
TO220 |
38000 |
询价 | |||
SILAN/士兰微 |
25+ |
DFN |
10000 |
原厂原装,价格优势 |
询价 | ||
SILAN(士兰微) |
23+ |
TO-220FJD-3L |
431 |
三极管/MOS管/晶体管 > 场效应管(MOSFET) |
询价 | ||
SAMSUNG/三星 |
23+ |
QFP48 |
98900 |
原厂原装正品现货!! |
询价 | ||
Silan |
25+ |
TO-247 |
20000 |
原装正品价格优惠,志同道合共谋发展 |
询价 | ||
冠坤电子 |
21+ |
10mm*12.5mm |
13 |
只做原装鄙视假货15118075546 |
询价 | ||
3M |
新 |
17 |
全新原装 货期两周 |
询价 | |||
SAMSUNG |
24+ |
QFP |
71 |
询价 | |||
SAMSUNG |
16+ |
QFP |
1052 |
进口原装现货/价格优势! |
询价 |
