SVSP11N65FD2中文资料士兰微数据手册PDF规格书

DESCRIPTION

SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode

high voltage power MOSFETs produced using Silan’s super junction

MOS technology. It achieves low conduction loss and switching

losses. It leads the design engineers to their power converters with

high efficiency, high power density, and superior thermal behavior.

Furthermore, it’s universal applicable, i.e., suitable for hard and soft

switching topologies.

FEATURES

 11A,650V, RDS(on)(typ.)=0.33@VGS=10V

 New revolutionary high voltage technology

 Ultra low gate charge

 Periodic avalanche rated

 Extreme dv/dt rated

 High peak current capability