SVSP11N65TD2中文资料士兰微数据手册PDF规格书

厂商型号	SVSP11N65TD2
功能描述	11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR
丝印标识	P11N65TD2
封装外壳	TO-220-3L
文件大小	413.58 Kbytes
页面数量	10 页
生产厂商	Silan Microelectronics Joint-stock
企业简称	SILAN【士兰微】
中文名称	杭州士兰微电子股份有限公司官网
原厂标识	SILAN
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-4 15:33:00
人工找货	SVSP11N65TD2价格和库存，欢迎联系客服免费人工找货

DESCRIPTION

SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode

high voltage power MOSFETs produced using Silan’s super junction

MOS technology. It achieves low conduction loss and switching

losses. It leads the design engineers to their power converters with

high efficiency, high power density, and superior thermal behavior.

Furthermore, it’s universal applicable, i.e., suitable for hard and soft

switching topologies.

FEATURES

 11A,650V, RDS(on)(typ.)=0.33@VGS=10V

 New revolutionary high voltage technology

 Ultra low gate charge

 Periodic avalanche rated

 Extreme dv/dt rated

 High peak current capability