N-Channel Shielded Gate PowerTrench® MOSFET 100V, 45A, 14.4mΩ

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss. • Shielded Gate MOSFET Technology\n• High efficiency andLowers switching noise/EMI\n• Max rDS(on) = 14.4 mΩ at VGS = 10 V, ID = 15 A\n• Low RDS(on) to Minimize Conduction Losses\n• Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 7.5 A\n• Low QG and Capacitance to Minimize Driver Losses\n• 50% lower Qrr t;

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 100 V, 14.4 m, 45 A

Features • Shielded Gate MOSFET Technology • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • Low QRR, Soft Recovery Body Diode • Low QOSS to Improve Light Load Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and ar

文件：267.59 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 100V 47A 8PQFN

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 100 V, 12.2 m, 52 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：243.26 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 100 V, 12.2 m, 52 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：243.26 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

100V Single N-Channel MOSFET

文件：969.51 Kbytes 页数：8 Pages

PFC

节能元件