NTTFS012N10MD中文资料N-Channel Shielded Gate PowerTrench® MOSFET 100V, 45A, 14.4mΩ数据手册ONSEMI规格书

描述 Description

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss.

特性 Features

• Shielded Gate MOSFET Technology
• High efficiency andLowers switching noise/EMI
• Max rDS(on) = 14.4 mΩ at VGS = 10 V, ID = 15 A
• Low RDS(on) to Minimize Conduction Losses
• Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 7.5 A
• Low QG and Capacitance to Minimize Driver Losses
• 50% lower Qrr than other MOSFET suppliers
• Low QRR, Soft Recovery Body Diode
• Lowers switching noise/EMI
• Low QOSS to Improve Light Load Efficiency
• MSL1 robust package design
• 100% UIL tested
• RoHS Compliant
• Very Low RDS*Qoss

应用 Application

• This product is general usage and suitable for many different applications.
• Isolated DC-DC primary switches
• AC-DC Synchronous Rectification
• High Switching Frequency Synchronous Buck
• Power Supplies
• Motor Drive

简介

NTTFS012N10MD属于分立半导体产品的晶体管-FETMOSFET-单个。由制造生产的NTTFS012N10MD晶体管 - FET，MOSFET - 单个分立式场效应晶体管 (FET) 广泛用于功率转换、电机控制、固态照明及其他应用，它们具有高频开关特性，同时又能承载大电流，使其在这些应用中具备一定优势。这类晶体管广泛应用于要求额定电压为几百伏或更低的应用，如果超出该额定电压值，则 IGBT 等其他器件更具竞争力。