丝印：05NC；Package：WDFN8；Power MOSFET 40 V, 5.6 m, 69 A, Single N?묬hannel

文件：201.24 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 40 V, 5.6 m, 69 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS005N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：203.66 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 40 V, 5.6 m, 69 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS005N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：203.66 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 40 V, 5.6 m, 69 A, Single N-Channel

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFWS005N04C − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：203.66 Kbytes 页数：7 Pages

ONSEMI

安森美半导体