MOSFET – P-Channel, POWERTRENCH -20 V, -56 A, 6.5 m

General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(on), switching performance and ruggedness. Features  Max RDS(on) = 6.5 m at VGS = −4.5 V, ID = −14 A  Max RDS(on) = 9.8 m at VGS = −2.5 V, ID = −11 A  Max

文件：249.03 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET, Single, P-Channel, -20V, 6.5mΩ, -56A, PQFN8 3x3

The leatest POWERTRENCH P-Channel MOSFET technology with optimized On-resistance and less gate charge.  • Lower On-resistance\n• Smaller gate charge;

ONSEMI

安森美半导体

WDFN-8

ON

上传：深圳市金嘉锐电子有限公司

WDFN-8

ON

上传：深圳市澳亿芯电子科技有限公司

原厂原封

ON

上传：深圳科宇泰科技有限公司