NTTFS007P02P8中文资料安森美半导体数据手册PDF规格书

General Description

This P−Channel MOSFET is produced using onsemi’s advanced

POWERTRENCH process that has been optimized for RDS(on),

switching performance and ruggedness.

特性 Features

 Max RDS(on) = 6.5 m at VGS = −4.5 V, ID = −14 A

 Max RDS(on) = 9.8 m at VGS = −2.5 V, ID = −11 A

 Max RDS(on) = 20 m at VGS = −1.8 V, ID = −9 A

 High Performance Trench Technology for Extremely Low RDS(on)

 High Power and Current Handling Capability in a Widely Used Surface Mount Package

 This Device is Pb−Free, Halide Free and is RoHS Compliant

Applications

 Load Switch

 Battery Management

 Power Management

 Reverse Polarity Protection