MOSFET - Power, Dual N- & P-Channel, SO8

MOSFET - Power, Dual N- & P-Channel, SO8 100 V, 83 mΩ, 4.5 A, -100 V, 131 mΩ, -3.6 A • Small Footprint (5 x 6 mm) for Compact Design\n• Low conduction loss\n• Low RDS(on) to Minimize Conduction Losses\n• Standard footprint\n• Low QG and Capacitance to Minimize Driver Losses\n• The Part is Not ESD Protected\n• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant;

ONSEMI

安森美半导体

丝印：83NP10M5；Package：SOIC8；MOSFET - Power, Dual N- & P-Channel, SO8 100 V, 83 m, 4.5 A, -100 V, 131 m, -3.6 A

文件：360.7 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

SOIC-8

ON

上传：深圳市宇集芯电子有限公司

ONSEMI

安森美半导体

上传：天津市博通航睿技术有限公司

SO-8 FL

ON

上传：深圳市壹芯创科技有限公司