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NTH4L070N120M3S中文资料Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200 V, M3S, TO-247-4L数据手册ONSEMI规格书
NTH4L070N120M3S规格书详情
描述 Description
The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
特性 Features
• TO-247-4L Package with Kelvin source configuration
• Excellent FOM [ = Rdson * Eoss ]
• Ultra Low Gate Charge (QG(tot) = 57 nC)
• High Speed Switching with Low Capacitance (Coss = 57 pF)
• 15V to 18V Gate Drive
• New M3S technology: 65 mohm RDS(ON) with low Eon and Eoff losses
• 100% Avalanche Tested
• Halide Free and RoHS Compliant
应用 Application
• Industrial
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON SEMICONDUCTOR |
23+ |
NTH4L075N065SC1 |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
ON |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
询价 | ||
onsemi |
21+ |
130 |
只做原装,优势渠道 ,欢迎实单联系 |
询价 | |||
ON(安森美) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
询价 | ||
ON |
TO247 |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | |||
ON |
2023+ |
TO247 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
询价 | ||
onsemi |
2025+ |
55740 |
询价 | ||||
ON |
23+ |
TO247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ON(安森美) |
2511 |
TO-247-4 |
8790 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 |
