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BC859A

PNPSiliconAFTransistors

PNPSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846,BC847,BC848,BC849,BC850(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC859A

SMDGeneralPurposePNPTransistors

DiotecDIOTEC

德欧泰克

BC859AMTF

PNPEpitaxialSiliconTransistor

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BC859AW

PNPSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846W,BC847W,BC848W,BC849W,BC850W(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC859AW

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC847W,BC848W,BC849W,BC850W(NPN)

SIEMENS

Siemens Ltd

BC859B

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC846,BC847, BC849,BC850(NPN)

SIEMENS

Siemens Ltd

BC859B

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC849andBC850. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoiseinputstagesofaudiofrequencyequipment.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BC859B

PNPSiliconAFTransistors

PNPSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846,BC847,BC848,BC849,BC850(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC859B

SwitchingandAmplifierApplications

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BC859B

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagin

DiotecDIOTEC

德欧泰克

BC859B

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistor PNPSilicon P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

BC859B

PNPGeneralPurposeTransistor

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●NPNcomplements:BC849andBC850.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

BC859B

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC849andBC850. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoiseinputstagesofaudiofrequencyequipment.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BC859B

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating –HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

YEASHINYea Shin Technology Co., Ltd

亞昕科技亞昕科技股份有限公司

BC859B

SMDGeneralPurposePNPTransistors

DiotecDIOTEC

德欧泰克

BC859B

PNPTransistors

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

BC859B

PNPgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

BC859BF

PNPSiliconAFTransistor

PNPSiliconAFTransistor •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC847BF,BC848BFBC849BF,BC850BF(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

BC859BL

GENERALPURPOSETRANSISTORSPNPSILICON

DESCRIPTION The BC856857858859ALBL/CLareavailablein SOT23package FEATURES ⚫MoistureSensitivityLevel:1 ⚫ESDRatingHumanBodyModel:>4000V MachineModel:>400 V ⚫AvailableinSOT23package

AITSEMIAiT Semiconductor Inc.

AiT創瑞科技

BC859BMTF

PNPEpitaxialSiliconTransistor

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    NTE859

  • 制造商:

    NTE Electronics

  • 功能描述:

    IC-Quad JFET Input Op Amp

  • 功能描述:

    IC OP-AMP 3MHZ 13V/ us DIP-14

  • 功能描述:

    IC, OP-AMP, 3MHZ, 13V/ us, DIP-14

  • 功能描述:

    IC-QUAD JFET INPUT OP AMP

  • 功能描述:

    DIP-14 QUAD OP AMP

  • 功能描述:

    IC, OP-AMP, 3MHZ, 13V/ us, DIP-14; Op Amp

  • Type:

    Low Noise; No. of

  • Amplifiers:

    4; Slew

  • Rate:

    13V/s; Supply Voltage

  • Range:

    15V; Amplifier Case

  • Style:

    DIP; No. of

  • Pins:

    14;

  • Bandwidth:

    3MHz; Operating Temperature

  • Min:

    0C; Gain

  • Bandwidth:

    3MHz;RoHS

  • Compliant:

    Yes

  • 功能描述:

    OP Amp Quad GP ±18V 14-Pin PDIP

供应商型号品牌批号封装库存备注价格
12
全新原装 货期两周
询价
2022+
8
全新原装 货期两周
询价
NTE可看货
21+
DIP14
80000
只做正品原装现货
询价
NTE
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
NTE
39625
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NTE
2017+
DIP-14
45288
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
23+
N/A
46590
正品授权货源可靠
询价
NTE
21+
DIP-14
50000
全新原装正品现货,支持订货
询价
NTE
2008+
DIP-14
507
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NTE
2008+
DIP-14
507
全新原装,支持实单,假一罚十,德创芯微
询价
更多NTE859供应商 更新时间2024-5-15 16:06:00