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BC859AW

PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC847W,BC848W,BC849W,BC850W(NPN)

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BC859AW

PNP Silicon AF Transistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846W,BC847W,BC848W,BC849W,BC850W(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BC859B

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistor PNPSilicon P/bLead(Pb)-Free

WEITRON

Weitron Technology

BC859B

PNPSiliconAFTransistors

PNPSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846,BC847,BC848,BC849,BC850(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BC859B

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagin

DiotecDiotec Semiconductor

德欧泰克

BC859B

SwitchingandAmplifierApplications

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BC859B

PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC846,BC847, BC849,BC850(NPN)

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BC859B

PNPgeneralpurposetransistors

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC849andBC850. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoiseinputstagesofaudiofrequencyequipment.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BC859B

PNPGeneralPurposeTransistor

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●NPNcomplements:BC849andBC850.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

BC859B

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating –HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

YEASHINYea Shin Technology Co., Ltd

亚昕科技亚昕科技股份有限公司

详细参数

  • 型号:

    BC859AW

  • 功能描述:

    两极晶体管 - BJT Transistor 200mW

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
恩XP
25+
SOT323
32000
NXP/恩智浦全新特价BC859AW即刻询购立享优惠#长期有货
询价
恩XP
24+
SOT-323
15200
新进库存/原装
询价
PHI
24+
323
5000
只做原装公司现货
询价
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
SOT-323
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
PHI
23+
323
50000
全新原装正品现货,支持订货
询价
PHI
24+
NA/
9250
原装现货,当天可交货,原型号开票
询价
PHI
25+
323
6000
原装正品,假一罚十!
询价
英飞凌
24+
TO220TO263
8082
公司现货库存,支持实单
询价
PHI
24+
323
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
更多BC859AW供应商 更新时间2025-7-23 14:14:00