isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 146mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.45 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET 100 V, 12 A, N?묬hannel, Logic Level DPAK

文件：69.79 Kbytes 页数：6 Pages

ONSEMI

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 146mΩ(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：316.98 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET 100 V, 12 A, N?묬hannel, Logic Level DPAK

文件：69.79 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET 100 V, 12 A, N?묬hannel, Logic Level DPAK

文件：69.79 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET 100 V, 12 A, N?묬hannel, Logic Level DPAK

文件：69.79 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power MOSFET 100 V, 12 A, N?묬hannel, Logic Level DPAK

文件：69.79 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

功率 MOSFET

功率 MOSFET，100 V，12 A， N 沟道，逻辑电平， DPAK • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode\n• Avalanche Energy Specified\n• Logic Level;

ONSEMI

安森美半导体

Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK

ONSEMI

安森美半导体