MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 8 A, 600 mΩ, DPAK

800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to • 900 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 15.5 nC)\n• Lower switching loss\n• Low Stored Energy in Output Capacitance (Eoss = 1.74 µJ @ 400 V)\n• Lower switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs os;

ONSEMI

安森美半导体

丝印：NTD600N80S3Z；Package：TO-252；MOSFET ??Power, N-Channel, SUPERFET III 800 V, 600 m, 8 A

文件：333.78 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

MOSFET ??Power, N-Channel, SUPERFET III 800 V, 600 m, 8 A

文件：216.41 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

TO252

ON

上传：深圳市凯睿晟科技有限公司

TO92

NTE

上传：深圳市融意电子有限公司