| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NTD6416AN | MOSFET – Power, N-Channel 100 V, 17 A, 81 m Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant 文件：235.14 Kbytes 页数：8 Pages | ONSEMI 安森美半导体 | ONSEMI | |
NTD6416AN | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 81mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：298.72 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
NTD6416AN | N-Channel MOSFET uses advanced SGT technology 文件：2.85426 Mbytes 页数：5 Pages | DOINGTER 杜因特 | DOINGTER | |
NTD6416AN | N-Channel Power MOSFET 100 V, 17 A, 81 m 文件：142.81 Kbytes 页数：7 Pages | ONSEMI 安森美半导体 | ONSEMI | |
MOSFET – Power, N-Channel 100 V, 17 A, 81 m Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant 文件：235.14 Kbytes 页数：8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 81mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：317.13 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
MOSFET – Power, N-Channel 100 V, 17 A, 81 m Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant 文件：235.14 Kbytes 页数：8 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 74mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：298.92 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 19A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 74mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：317.36 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 100V, ID= 18.1 A RDS(ON) 文件：1.43471 Mbytes 页数：4 Pages | BYCHIP 百域芯 | BYCHIP |
技术参数
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
100
- VGS Max (V)：
20
- VGS(th) Max (V)：
4
- ID Max (A)：
17
- PD Max (W)：
71
- RDS(on) Max @ VGS = 10 V(mΩ)：
81
- Qg Typ @ VGS = 10 V (nC)：
20
- Ciss Typ (pF)：
620
- Package Type：
DPAK-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
ON/安森美 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ON/安森美 |
25+ |
TO-252 |
10000 |
原装现货假一罚十 |
询价 | ||
ON/安森美 |
2022+ |
DPAK-4IP |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
ON/安森美 |
23+ |
TO-252 |
39000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ON(安森美) |
23+ |
标准封装 |
8000 |
正规渠道,只有原装! |
询价 | ||
ON |
2022+ |
DPAK-3 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
ON/安森美 |
23+ |
DPAK-3 |
89630 |
当天发货全新原装现货 |
询价 | ||
ON/安森美 |
20+ |
TO-252 |
300000 |
现货很近!原厂很远!只做原装 |
询价 |
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