MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 8 A, 600 mΩ, TO-220F

800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to • 900 V @ TJ = 150 °C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 15.5 nC)\n• Lower switching loss\n• Low Stored Energy in Output Capacitance (Eoss = 1.74 µJ @ 400 V)\n• Lower switching loss\n• Optimized Capacitance\n• Lower peak Vds and lower Vgs os;

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丝印：NTPF600N80S3Z；Package：TO-220F；MOSFET ??Power, N-Channel, SUPERFET III 800 V, 600 m, 8 A

文件：216.41 Kbytes 页数：9 Pages

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安森美半导体

MOSFET ??Power, N-Channel, SUPERFET III 800 V, 600 m, 8 A

文件：333.78 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

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