型号：NTD2955T4G；Package：TO-252；-60V P-Channel MOSFET

Features Avalanche Energy Specified IDSSand VDS(on) Specified at Elevated Temperature Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes RDS(on) 150 mΩ (VGS = -10V) VDS (V) = -60V ID = -12A (VGS = -10V)

文件：388.34 Kbytes 页数：6 Pages

翊欧

型号：NTD2955T4G；Package：TO-252；-60V P-Channel MOSFET

Features Avalanche Energy Specified IDSSand VDS(on) Specified at Elevated Temperature Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes RDS(on) 150 mΩ (VGS = -10V) VDS (V) = -60V ID = -12A (VGS = -10V)

文件：388.34 Kbytes 页数：6 Pages

翊欧

型号：NTD2955；??0 V, ??2 A, P?묬hannel DPAK

Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suite

文件：124.5 Kbytes 页数：8 Pages

安森美半导体

型号：NTD2955；-60V P-Channel MOSFET

Features Avalanche Energy Specified IDSSand VDS(on) Specified at Elevated Temperature Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes RDS(on) 150 mΩ (VGS = -10V) VDS (V) = -60V ID = -12A (VGS = -10V)

文件：388.34 Kbytes 页数：6 Pages

翊欧

型号：NTD2955；isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：260.2 Kbytes 页数：2 Pages

无锡固电

型号：NTD2955；P-channel Enhancement Mode Power MOSFET

Features VDS= -60V, ID= -20A RDS(ON)

文件：747.7 Kbytes 页数：4 Pages

百域芯

型号：NTD2955-1；isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：280.24 Kbytes 页数：2 Pages

无锡固电

型号：NTD2955-1G；P-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switch

文件：939.04 Kbytes 页数：7 Pages

微碧半导体

型号：NTD2955G；??0 V, ??2 A, P?묬hannel DPAK

Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suite

文件：124.5 Kbytes 页数：8 Pages

安森美半导体

型号：NTD2955G；P-Channel 60-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switch

文件：987.84 Kbytes 页数：8 Pages

微碧半导体