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NTH4L080N120SC1	文件：419.16 Kbytes Page：8 Pages	型号：NTH4L080N120SC1；Package：TO-247-4L；MOSFET ??Power, N-Channel, Silicon Carbide, 1200 V, 80 m 文件：419.16 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
NTH4L080N120SC1	文件：419.16 Kbytes Page：8 Pages	型号：NTH4L080N120SC1；Package：TO-247-4L；MOSFET ??Power, N-Channel, Silicon Carbide, 1200 V, 80 m 文件：419.16 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
	文件：409.41 Kbytes Page：8 Pages	型号：NTH4L080N120SC1；Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl 文件：409.41 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
	文件：411.64 Kbytes Page：8 Pages	型号：NTH4L080N120SC1；Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl 文件：411.64 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
	文件：360.35 Kbytes Page：3 Pages	型号：NTH4L080N120SC1；SiC N-Channel MOSFET FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives 文件：360.35 Kbytes 页数：3 Pages	ISC 无锡固电	ISC
	文件：409.41 Kbytes Page：8 Pages	型号：NTH4L080N120SC1_V01；Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl 文件：409.41 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
	文件：411.64 Kbytes Page：8 Pages	型号：NTH4L080N120SC1_V02；Silicon Carbide (SiC) MOSFET – EliteSiC, 80mohm, 1200V, M1, TO-247-4L Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits incl 文件：411.64 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	NTH4L080N120SC1	onsemi(安森美)	24+	TO-247-4	7814	支持大陆交货,美金交易。原装现货库存。	询价
深圳市芯球通科技有限公司	NTH4L080N120SC1	ON(安森美)	23+	TO-247-4	14548	公司只做原装正品,假一赔十	询价
柒号芯城电子商务(深圳)有限公司	NTH4L080N120SC1	ON	2024+	N/A	70000	柒号只做原装现货价秒杀全网	询价
深圳市盈慧通电子有限公司	NTH4L080N120SC1	ON(安森美)	2511	TO-247-4	4525	电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价	询价
深圳市达恩科技有限公司	NTH4L080N120SC1	ON	24+	NA	3000	进口原装假一罚十现货	询价
深圳市能创芯电子科技有限公司	NTH4L080N120SC1	ON	23+	TO-247	3000	全新原装正品!一手货源价格优势!	询价
深圳市安富世纪电子有限公司	NTH4L080N120SC1	ON	23+	TO247	50000	全新原装正品现货,支持订货	询价
深圳市威雅利发展有限公司	NTH4L080N120SC1	ON		TO247	30	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市赛特兴科技有限公司	NTH4L080N120SC1	ON	23+	TO247	30	正规渠道,只有原装!	询价
深圳市恒科翔业电子有限公司	NTH4L080N120SC1	ON/安森美	22+		24000	原装正品现货,实单可谈,量大价优	询价

更多NTH4L080N120SC1供应商更新时间2025-8-6 16:12:00

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