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首页>NTH4L080N120SC1>芯片详情
NTH4L080N120SC1_ONSEMI/安森美半导体_Silicon Carbide (SiC) MOSFET – 80 mohm, 1200V, M1, TO-247-4L盈慧通商城
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产品属性
- 类型
描述
- 制造商编号
:NTH4L080N120SC1
- 生产厂家
:安森美
- Pb-free
:Pb
- Halide free
:H
- Status
:Active
- Channel Polarity
:N-Channel
- Configuration
:Single
- V(BR)DSS Min (V)
:1200
- VGS Max (V)
:25
- VGS(th) Max (V)
:4.3
- ID Max (A)
:29
- PD Max (W)
:170
- RDS(on) Max @ VGS = 2.5 V(mΩ)
:NA
- RDS(on) Max @ VGS = 4.5 V(mΩ)
:NA
- RDS(on) Max @ VGS = 10 V(mΩ)
:NA
- Qg Typ @ VGS = 4.5 V (nC)
:NA
- Qg Typ @ VGS = 10 V (nC)
:NA
- Ciss Typ (pF)
:1112
- Package Type
:TO-247-4
供应商
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