丝印：NTHL020N090SC1；Package：TO-247；MOSFET ??SiC Power, Single N-Channel, TO247-3L 900 V, 20 m, 118 A

文件：264.75 Kbytes 页数：8 Pages

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丝印：NTHL020N090SC1；Package：TO-247；MOSFET ??SiC Power, Single N-Channel, TO247-3L 900 V, 20 m, 118 A

文件：264.75 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900V, M2, TO-247-3L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 196 nC) • Low Effective Output Capacitance (Coss = 296 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level int

文件：334.99 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 20mohm, 900V, M2, TO-247-3L

Features • Typ. RDS(on) = 20 m @ VGS = 15 V • Typ. RDS(on) = 16 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 196 nC) • Low Effective Output Capacitance (Coss = 296 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level int

文件：334.99 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET ??SiC Power, Single N-Channel, TO247-3L 900 V, 20 m, 118 A

文件：264.75 Kbytes 页数：8 Pages

ONSEMI

安森美半导体