NP100P06PDG-E2-AY资料datasheet下载市场行情-114ic电子网

首页 >NP100P06>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
NP100P06PDG	文件：191.09 Kbytes Page：7 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID( 文件：191.09 Kbytes 页数：7 Pages	NEC 瑞萨	NEC
NP100P06PDG	文件：1.35852 Mbytes Page：8 Pages	-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A ) • Low input capacitance : Ciss = 文件：1.35852 Mbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
NP100P06PDG-E1-AY	文件：1.35852 Mbytes Page：8 Pages	-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A ) • Low input capacitance : Ciss = 文件：1.35852 Mbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
NP100P06PDG-E1-AY	文件：191.09 Kbytes Page：7 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID( 文件：191.09 Kbytes 页数：7 Pages	NEC 瑞萨	NEC
NP100P06PDG-E2-AY	文件：191.09 Kbytes Page：7 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID( 文件：191.09 Kbytes 页数：7 Pages	NEC 瑞萨	NEC
NP100P06PLG	文件：189.76 Kbytes Page：7 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID 文件：189.76 Kbytes 页数：7 Pages	NEC 瑞萨	NEC
NP100P06PLG	文件：1.36064 Mbytes Page：8 Pages	-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A ) • Low input capacitance : Ciss = 文件：1.36064 Mbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
NP100P06PLG-E1-AY	文件：1.36064 Mbytes Page：8 Pages	-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A ) • Low input capacitance : Ciss = 文件：1.36064 Mbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
NP100P06PLG-E1-AY	文件：189.76 Kbytes Page：7 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID 文件：189.76 Kbytes 页数：7 Pages	NEC 瑞萨	NEC
NP100P06PLG-E2-AY	文件：189.76 Kbytes Page：7 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID 文件：189.76 Kbytes 页数：7 Pages	NEC 瑞萨	NEC

详细参数

型号：
NP100P06
制造商：
NEC
制造商全称：
NEC
功能描述：
MOS FIELD EFFECT TRANSISTOR

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	NP100P06PLG	ST/意法	23+	TO247	69820	终端可以免费供样,支持BOM配单!	询价
深圳市晨豪科技有限公司	NP100P06PLG	RENESAS/瑞萨	23+	TO-263	89630	当天发货全新原装现货	询价
深圳市芯皇电子有限公司	NP100P06PLG	RENESAS/瑞萨	26+	TO-252	9000	专业配单,原装正品假一罚十,代理渠道价格优	询价
深圳市宏捷佳电子科技有限公司	NP100P06PLG	NEC	26+	TO-263	12300	独立分销商公司只做原装诚心经营免费试样正品保证	询价
万三科技(深圳)有限公司	NP100P06PLG	NEC(日电电子)	25+	封装	500000	源自原厂成本,高价回收工厂呆滞	询价
洪芯国际半导体（深圳）有限公司	NP100P06PLG	NEC	26+	原厂原封装	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
深圳市创新迹电子有限公司	NP100P06PLG	RENESAS/瑞萨	22+	TO-263	20000	公司只做原装品质保障	询价
深圳市河锋鑫科技有限公司	NP100P06PLGE1AY	Renesas	22+	TO2633 D2Pak (2 Leads + Tab) T	9000	原厂渠道,现货配单	询价
深圳市正纳电子有限公司	NP100P06PLG-E1-AY	Renesas(瑞萨)	26+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
京海半导体(深圳)有限公司	NP100P06PLG-E1-AY	RENESAS/瑞萨	25+	TO263	10000	原装现货假一罚十	询价

更多NP100P06供应商更新时间2026-10-14 11:10:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2026 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号