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NP100P06PDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NP100P06PDG

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NP100P06PDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NP100P06PDG-E1-AY

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NP100P06PDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NP100P06PDG_15

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NP100P06PDG-E1-AYNote

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NP100P06PDG-E2-AYNote

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NP100P06PLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NP100P06PLG

-60V–-100A–P-channelPowerMOSFETApplication:Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

详细参数

  • 型号:

    NP100P06PDG

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    MOS FIELD EFFECT TRANSISTOR

供应商 型号 品牌 批号 封装 库存 备注 价格
NEC
23+
TO-263
33500
全新原装真实库存含13点增值税票!
询价
NEC
2022+
tray
2800
正品现货直销 稳定供应现货可含税
询价
RENESAS
20000
原装现货,可追溯原厂渠道
询价
NEC
2021+
TO-252
1680
询价
NEC
10+
TO-252
1000
全新原装的现货
询价
08+(pbfree)
8866
询价
NEC
2017+
TO-263
54789
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
RENESAS
2020+
TO-263
106
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
NEC
23+
TO-252
9980
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
Renesas
1822+
TO-263
9852
只做原装正品假一赔十为客户做到零风险!!
询价
更多NP100P06PDG供应商 更新时间2024-3-28 16:17:00