NP100P06PLG-E1-AY资料datasheet下载第5页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
NP100P06PDG-E1-AY	文件：1.35852 Mbytes Page：8 Pages	-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A )  Low input capacitance : Ciss = 文件：1.35852 Mbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
NP100P06PDG-E2-AY	文件：191.09 Kbytes Page：7 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID( 文件：191.09 Kbytes 页数：7 Pages	NEC 瑞萨	NEC
NP100P06PLG	文件：189.76 Kbytes Page：7 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID 文件：189.76 Kbytes 页数：7 Pages	NEC 瑞萨	NEC
NP100P06PLG	文件：1.36064 Mbytes Page：8 Pages	-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A )  Low input capacitance : Ciss = 文件：1.36064 Mbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
NP100P06PLG-E1-AY	文件：1.36064 Mbytes Page：8 Pages	-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A )  Low input capacitance : Ciss = 文件：1.36064 Mbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
NP100P06PLG-E1-AY	文件：189.76 Kbytes Page：7 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID 文件：189.76 Kbytes 页数：7 Pages	NEC 瑞萨	NEC
NP100P06PLG-E2-AY	文件：189.76 Kbytes Page：7 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID 文件：189.76 Kbytes 页数：7 Pages	NEC 瑞萨	NEC
NP109N04PUG	文件：235.02 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) • High current rating ID(DC) = ±110 A 文件：235.02 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
NP109N04PUG	文件：345.32 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：345.32 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
NP109N04PUG-E1-AY	文件：235.02 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) • High current rating ID(DC) = ±110 A 文件：235.02 Kbytes 页数：8 Pages	NEC 瑞萨	NEC

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详细参数

型号：
NP10
功能描述：
MOSFET P-CH -60V MP-25ZP/TO-263
RoHS：
是
类别：
分离式半导体产品 >> FET - 单
系列：
-
标准包装：
1,000
系列：
MESH OVERLAY™ FET
型：
MOSFET N 通道，金属氧化物 FET
特点：
逻辑电平门
漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
C：
180 毫欧 @ 9A，10V Id 时的
Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
Vgs：
72nC @ 10V 输入电容(Ciss) @
Vds：
1560pF @ 25V 功率 -
最大：
40W
安装类型：
通孔
封装/外壳：
TO-220-3 整包
供应商设备封装：
TO-220FP
包装：
管件

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	NP100P06PLG-E1-AY	Renesas(瑞萨)	24+	标准封装	9633	支持大陆交货,美金交易。原装现货库存。	询价
深圳市正纳电子有限公司	NP100P06PLG-E1-AY	Renesas(瑞萨)	23+	原厂封装	32078	10年以上分销商,原装进口件,服务型企业	询价
京海半导体(深圳)有限公司	NP100P06PLG-E1-AY	RENESAS/瑞萨	21+	TO263	10000	原装现货假一罚十	询价
深圳市鹏顺微电子科技有限公司	NP100P06PLG-E1-AY	Renesas Electronics America	2022+	TO-263-3,D2Pak(2 引线 + 接片	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
现代芯城（深圳）科技有限公司	NP100P06PLG-E1-AY		24+	N/A	78000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市宏捷佳电子科技有限公司	NP100P06PLG-E1-AY	Renesas	25+	MP-25ZPTO	35400	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市南科功率半导体有限公司	NP100P06PLG-E1-AY	NK/南科功率	2025+	TO-263	986966	国产	询价
万三科技(深圳)有限公司	NP100P06PLG-E1-AY	Renesas(瑞萨)	25+	封装	500000	源自原厂成本,高价回收工厂呆滞	询价
深圳市力拓辉电子有限公司	NP100P06PLG-E1-AY	Renesas	21+	-	1220	只做原装鄙视假货15118075546	询价
深圳市瑞新盛科技有限公司	NP100S04D6	NATLINEAR/南麟	24+	PDFN5*6-8L-A	30000	专营NATLINEAR南麟原装保障	询价

更多NP10供应商更新时间2025-12-22 23:00:00

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