| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MOS FIELD EFFECT TRANSISTOR Features Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A) Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified 文件：268.66 Kbytes 页数：8 Pages | RENESAS 瑞萨 | RENESAS | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID 文件：190.95 Kbytes 页数：7 Pages | NEC 瑞萨 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID 文件：190.95 Kbytes 页数：7 Pages | NEC 瑞萨 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID 文件：190.95 Kbytes 页数：7 Pages | NEC 瑞萨 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(D 文件：191.11 Kbytes 页数：7 Pages | NEC 瑞萨 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(D 文件：191.11 Kbytes 页数：7 Pages | NEC 瑞萨 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(D 文件：191.11 Kbytes 页数：7 Pages | NEC 瑞萨 | NEC | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID( 文件：191.09 Kbytes 页数：7 Pages | NEC 瑞萨 | NEC | ||
-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A ) Low input capacitance : Ciss = 文件：1.35852 Mbytes 页数：8 Pages | RENESAS 瑞萨 | RENESAS | ||
-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A ) Low input capacitance : Ciss = 文件：1.35852 Mbytes 页数：8 Pages | RENESAS 瑞萨 | RENESAS |
详细参数
- 型号：
NP10
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
24+ |
TO-263 |
60000 |
全新原装现货 |
询价 | ||
R |
TO263 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
RENESAS/瑞萨 |
23+ |
TO-263 |
89630 |
当天发货全新原装现货 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO-263 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
询价 | ||
R |
25+ |
TO263 |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
询价 | ||
Renesas Electronics America |
2022+ |
- |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
RENESAS/瑞萨 |
23+ |
MP-25ZPTO-263 |
32687 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 |
相关规格书
更多- NP109N04PUJ
- NP109N04PUJ-E2B-AY
- NP109N04PUK-E1-AY
- NP109N055PUJ-E1B-AY
- NP109N055PUK-E1-AY
- NP1100SAT3G
- NP1100SBT3G
- NP1100SCT3G
- NP110N04PDG-E1-AY
- NP110N04PUG-E1-AY
- NP110N04PUJ
- NP110N04PUJ-E2B-AY
- NP110N04PUK-E1-AY
- NP110N055PUG-E1-AZ
- NP110N055PUJ-E2B-AY
- NP12-1A66-11000-210
- NP12-1A66-1300-210
- NP12-1A66-2500-210
- NP12-1A66-2500-213
- NP12-1A71-11000-210
- NP12-1A71-1300-210
- NP12-1A71-2500-210
- NP12-1A71-2500-213
- NP1226
- NP1226BK
- NP1226I
- NP12-2A66-1500-220
- NP12-2A71-1500-220
- NP1235A
- NP12-6
- NP1262AL
- NP1262GY
- NP1262LA
- NP1300SAMCT3G
- NP1300SBMCT3G
- NP1300SCMCT3G
- NP1300SDMCT3G
- NP1326
- NP1326BK
- NP1326I
- NP1326W
- NP147AL
- NP147GY
- NP147W
- NP14BK
相关库存
更多- NP109N04PUJ-E1B-AY
- NP109N04PUK
- NP109N04PUK-E2-AY
- NP109N055PUK
- NP1100SAMCT3G
- NP1100SBMCT3G
- NP1100SCMCT3G
- NP110N03PUG-E1-AY
- NP110N04PDG-E1-AZ
- NP110N04PUG-E1-AZ
- NP110N04PUJ-E1B-AY
- NP110N04PUK
- NP110N055PUG-E1-AY
- NP110N055PUG-E2-AY
- NP110N055PUK-E1-AY
- NP12-1A66-11000-210_DE
- NP12-1A66-1300-210_DE
- NP12-1A66-2500-210_DE
- NP12-1A66-2500-213_DE
- NP12-1A71-11000-210_DE
- NP12-1A71-1300-210_DE
- NP12-1A71-2500-210_DE
- NP12-1A71-2500-213_DE
- NP1226AL
- NP1226GY
- NP1226W
- NP12-2A66-1500-220_DE
- NP12-2A71-1500-220_DE
- NP126
- NP1262
- NP1262BK
- NP1262I
- NP1262W
- NP1300SAT3G
- NP1300SBT3G
- NP1300SCT3G
- NP13-100-18
- NP1326AL
- NP1326GY
- NP1326LA
- NP147
- NP147BK
- NP147I
- NP14AL
- NP14GY
